onsemi FCD9N60NTM
EOL
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | FCD9N60NTM | 0 | 1 | Cut Tape | 7h | |||||||
| element14 APAC | FCD9N60NTM | 0 | 1 | Cut Tape | 2h | |||||||
| Win Source | WS-FCD9N60NTM | 2159 | 15 | 8h | ||||||||
| Worldway Electronics | FCD9N60NTM | 8044 | 7 | Tape & Reel | 12h | |||||||
| Fmall Co., Limited | FCD9N60NTM | 22.530 | >1wk |
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de onsemi FCD9N60NTM desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
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 SnapEDA | Footprint | Descargar |
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 1.195
Stock
155,258
265,167
Authorized Distributors
2
6
Mount
Surface Mount
-
Case/Package
DPAK
-
Drain to Source Voltage (Vdss)
600 V
-
Continuous Drain Current (ID)
9 A
10 A
Threshold Voltage
3 V
-
Rds On Max
385 mΩ
-
Gate to Source Voltage (Vgs)
30 V
-
Power Dissipation
92.6 W
-
Input Capacitance
1 nF
-
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-02
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
Componentes relacionados
STMicroelectronicsSTD13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
onsemiFCD380N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
STMicroelectronicsSTD13NM60ND
N-channel 600 V, 0.32 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package
STMicroelectronicsSTD13N60M2
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
Descripciones
Descripciones de onsemi FCD9N60NTM suministradas por sus distribuidores.
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 9A DPAK
Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET,N CH,600V,9A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance385 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11.5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1 nF
Max Operating Temperature150 °C
Max Power Dissipation92.6 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation92.6 W
Rds On Max385 mΩ
Rise Time9.6 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time28.7 ns
Turn-On Delay Time12.7 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento