onsemi FCB070N65S3
$ 3.325
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FCB070N65S3 | 50.763 | 800 | 1d | ||||||||
| Newark | FCB070N65S3 | 156 | 1 | Cut Tape | ||||||||
| DigiKey | FCB070N65S3CT-ND | 550 | 1 | Cut Tape | ||||||||
| Arrow Electronics | FCB070N65S3 | 800 | 1 | |||||||||
| Verical | FCB070N65S3 | 660 | 2 |
Historial de existencias
Tendencia de 3 meses: -0.89%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de onsemi FCB070N65S3 desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Cadena de suministros
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Componentes relacionados
STMicroelectronicsSTB43N65M5
Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package
STMicroelectronicsSTB45N50DM2AG
MOSFET N-CH 500V 35A D2PAK / N-Channel 500 V 35A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
STMicroelectronicsSTB42N60M2-EP
N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package
VishaySIHB33N60E-GE3
Power MOSFET, N Channel, 600 V, 33 A, 0.099 ohm, TO-263 (D2PAK), Surface Mount
Descripciones
Descripciones de onsemi FCB070N65S3 suministradas por sus distribuidores.
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 70 mΩ, D2PAK
MOSFET N-CH 650V 44A D2PAK / N-Channel 650 V 44A (Tc) 312W (Tc) Surface Mount D2PAK (TO-263)
Power Field-Effect Transistor, 44A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
MOSFET, N-CH, 650V, 44A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 44A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.062ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 312W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: SuperFET III Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advancetechnology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dtrate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -0.89%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)44 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.09 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation312 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation312 W
Rds On Max70 mΩ
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time89 ns
Turn-On Delay Time26 ns
Dimensions
Height4.83 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento