onsemi BSS138
$ 0.077
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +49.63%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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1 piezas disponibles
Modelos CAD
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Price @ 1000
$ 0.077
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Stock
51,318,190
3,745,757
3,745,757
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
50 V
50 V
50 V
Continuous Drain Current (ID)
220 mA
200 mA
200 mA
Threshold Voltage
1.3 V
1.25 V
1.25 V
Rds On Max
3.5 Ω
3.5 Ω
3.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
360 mW
225 mW
225 mW
Input Capacitance
27 pF
50 pF
50 pF
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Power MOSFET, N Channel, 60 V, 230 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount
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2N7002K Series N-Channel 60 V 2 Ohm 0.6 nC MosFet Surface Mount - SOT-23-3
Descripciones
Descripciones de onsemi BSS138 suministradas por sus distribuidores.
Trans MOSFET N Channel 50 Volt 0.22A 3-Pin SOT-23 Tape and Reel
N-Channel MOSFET, Logic Level Enhancement Mode, 50V, 220mA
Power MOSFET, N Channel, 50 V, 300 mA, 2.5 ohm, SOT-23, Surface Mount
N-Channel Logic Level Enhancement Mode Field Effect Transistor Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: 0.22 A, 50 V. RDS(ON) = 3.5 W @ VGS = 10 V High density cell design for extremely low RDS(ON). Rugged and Relaible. Compact industry standard SOT-23 surface mount package.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +49.63%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)220 mA
Current Rating220 mA
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance6 Ω
Drain to Source Voltage (Vdss)50 V
Dual Supply Voltage50 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance27 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation360 mW
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Nominal Vgs1.3 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation360 mW
Rds On Max3.5 Ω
Resistance6 Ω
Rise Time9 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage1.3 V
Turn-Off Delay Time20 ns
Turn-On Delay Time2.5 ns
Voltage Rating (DC)50 V
Dimensions
Height1.11 mm
Length2.92 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento