onsemi BS170-D26Z
$ 0.156
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | BS170-D26Z | 2882 | 5 | Cut Tape | ||||||||
| Verical | BS170_D26Z | 8000 | 2K | |||||||||
| Arrow Electronics | BS170-D26Z | 8000 | 2K | |||||||||
| Master Electronics | BS170-D26Z | 20.000 | 2K | |||||||||
| Onlinecomponents.com | BS170-D26Z | 20.000 | 2K | Bulk |
Historial de existencias
Tendencia de 3 meses: +1.80%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi BS170-D26Z.
Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | 3D | Descargar |
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.156
$ 0.129
$ 0.129
Stock
824,158
231,480
231,480
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92-3
TO-92-3
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
500 mA
500 mA
500 mA
Threshold Voltage
2.1 V
2.1 V
2.1 V
Rds On Max
5 Ω
5 Ω
5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
830 mW
830 mW
830 mW
Input Capacitance
40 pF
40 pF
40 pF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-04-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Componentes relacionados
Descripciones
Descripciones de onsemi BS170-D26Z suministradas por sus distribuidores.
BS170 Series 60 V 500 mA 830 mW N-Channel Small Signal Mosfet - TO-92-3
ON Semiconductor BS170-D26Z MOSFET 1 N-channel TO 92 Tape on Full reel
N-Channel Small Signal MOSFET 60V, 500mA, 5Ω
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R
TO-92/N-Channel Enhancement Mode Field Effect Transistor
N CHANNEL MOSFET, 60V, 500mA, TO-92, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +1.80%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-92-3
Contact PlatingCopper, Silver, Tin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight286 mg
Technical
Continuous Drain Current (ID)500 mA
Current Rating500 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance40 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation830 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
Power Dissipation830 mW
Rds On Max5 Ω
Resistance5 Ω
Schedule B8541210080
Threshold Voltage2.1 V
Turn-Off Delay Time10 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height8.77 mm
Length5.2 mm
Width4.19 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi BS170-D26Z.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento