Nexperia PUMD2,115

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ

Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin TSSOP T/R

Bipolar Transistors (BJT); PUMD2,115; NEXPERIA; NPN, PNP; 6; 50 V; 100 mA

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

PUMD2 Series 40/10 V 100 mA Surface Mount NPN/PNP Digital Transistor - SOT-363

100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR

TRANS PREBIAS 1NPN 1PNP 6TSSOP / Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Nexperia NPN/PNPdigital transistor, UMTencapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage50 V

Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, V(br)ceo:50V; Power Dissipation, Pd:200mW; DC Collector Current:100mA; DC Current Gain Max (hfe):60 ;RoHS Compliant: Yes

TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: PUMD2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 150mV; Continuous Collector Current Ic Max: 100A; Current Ic Continuous a Max: 100A; Current Ic hFE: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 60hFE; Full Power Rating Temperature: 25°C; Hfe Min: 60; Module Configuration: Dual; No. of Pins: 6Pins; No. of Transistors: 2; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Pd: 200mW; Power Dissipation Ptot Max: 300mW; Resistance R1: 22kohm; Resistance R2: 22kohm; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP