Infineon SPD04N80C3BTMA1
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon SPD04N80C3BTMA1.
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.671
Stock
88,862
366,062
Authorized Distributors
0
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-252
TO-252-3
Drain to Source Voltage (Vdss)
800 V
800 V
Continuous Drain Current (ID)
4 A
4 A
Threshold Voltage
-
-
Rds On Max
1.3 Ω
1.3 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
63 W
63 W
Input Capacitance
570 pF
570 pF
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Descripciones
Descripciones de Infineon SPD04N80C3BTMA1 suministradas por sus distribuidores.
Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R
4 A 800 V 1.3 ohm N-CHANNEL Si POWER MOSFET TO-252AA
Replacement for CoolMOS™ C3 is CoolMOS™ P7, PG-TO252-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)4 A
Drain to Source Resistance1.3 Ω
Drain to Source Voltage (Vdss)800 V
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance570 pF
Max Dual Supply Voltage800 V
Max Operating Temperature150 °C
Max Power Dissipation63 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance1.3 Ω
Package Quantity2500
PackagingTape & Reel
Power Dissipation63 W
Rds On Max1.3 Ω
Rise Time15 ns
Turn-Off Delay Time72 ns
Turn-On Delay Time25 ns
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon SPD04N80C3BTMA1.
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento