Infineon IRLZ44NSPBF
$ 2.24
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-11-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Descripciones
Descripciones de Infineon IRLZ44NSPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.022Ohm;ID 47A;D2Pak;PD 110W;VGS +/-16V;-55
Single N-Channel 55 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 110 W
Trans MOSFET N-CH 55V 47A 3-Pin(2+Tab) D2PAK
FIFTH GENERATION HEXFET POWER MOSFET Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 55V, 47A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:55V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:110W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:47A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:D2-PAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:160A; SMD Marking:LZ44NS; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)47 A
Current Rating47 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance22 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max22 mΩ
Recovery Time120 ns
Resistance22 mΩ
Rise Time84 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)55 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento