Infineon IRLZ24NPBF
$ 1.23
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IRLZ24NPBF desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint | ||
 SnapEDA | SímboloFootprint | 3D | Descargar |
 Ultra Librarian | SímboloFootprint | Descargar |
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-08-25
LTD Date2013-02-25
Componentes relacionados
Descripciones
Descripciones de Infineon IRLZ24NPBF suministradas por sus distribuidores.
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 18 A, TO-220, IRLZ24NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 55 V 0.105 Ohm 15 nC HEXFET® Power Mosfet - TO-220-3
Transistor MOSFET N-Ch. 18A/55V TO220 IRLZ 24 NPBF
Trans MOSFET N-CH 55V 18A 3-Pin(3+Tab) TO-220AB
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 0.06Ohm,ID 18A,TO-220AB,PD 45W,VGS +/-16V | Infineon IRLZ24N
55V SINGLE N-CHANNEL HEXFETPOWER MOSFET IN A HEXDIP PA
HEXFET POWER MOSFET Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 74 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 7.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 45
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220AB
MountPCB, Through Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)18 A
Current Rating17 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance480 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance60 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation45 W
Rds On Max60 mΩ
Recovery Time90 ns
Resistance60 mΩ
Rise Time74 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time20 ns
Turn-On Delay Time7.1 ns
Voltage Rating (DC)55 V
Dimensions
Height19.15 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento