Infineon IRLR8259TRPBF
$ 1.88
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRLR8259TRPBF | 0 | 20 | Bulk | 15h | |||||||
| Microchip USA | IRLR8259TRPBF | 2053 | 3K | Tray | 18m | |||||||
| Weyland Electronics Group Pte. Ltd. | IRLR8259TRPBF | 800 | 1 | Tape & Reel | 2h | |||||||
| Win Source | WS-IRLR8259TRPBF | 16.280 | 28 | 3h | ||||||||
| Worldway Electronics | IRLR8259TRPBF | 15.878 | 7 | Tape & Reel | 2h |
Historial de existencias
Tendencia de 3 meses: -100%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IRLR8259TRPBF desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | 3D | Descargar |
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 1.88
$ 0.337
Stock
506,008
383,649
Authorized Distributors
1
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
25 V
25 V
Continuous Drain Current (ID)
42 A
42 A
Threshold Voltage
-
1.9 V
Rds On Max
8.7 mΩ
8.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
48 W
48 W
Input Capacitance
900 pF
900 pF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-12-16
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
Componentes relacionados
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25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
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MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 6.7Milliohms;ID 60A;D-Pak (TO-252AA);PD 48W
onsemiNTD4858NAT4G
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Descripciones
Descripciones de Infineon IRLR8259TRPBF suministradas por sus distribuidores.
IRLR8259 Series 25 V 8.7 mOhm 6.8 nC Surface Mount HEXFET Power MOSFET - DPAK-3
Trans MOSFET N-CH 25V 57A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 25V 57A DPAK
25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET Power MOSFET Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 25V, 57A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; P
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -100%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance8.7 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time8.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance900 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance8.7 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation48 W
Rds On Max8.7 mΩ
Rise Time38 ns
Schedule B8541290080
Turn-Off Delay Time9.1 ns
Turn-On Delay Time8.4 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento