Descripciones de Infineon IRLR3103PBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.019Ohm;ID 55A;D-Pak (TO-252AA);PD 107W
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:55A; On Resistance, Rds(on):19mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes
MOSFET, N, 30V, 46A, D-PAK; Transistor type:MOSFET; Voltage, Vds typ:30V; Current, Id cont:45A; Resistance, Rds on:0.019ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:1V; Case style:D-PAK (TO-252); Case style, alternate:D-PAK; Current, Idm pulse:69A; Marking, SMD:IRLR3103; Power dissipation:69W; Power, Pd:69W; Resistance, Rds on @ Vgs = 10V:0.019ohm; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Thermal resistance, junction to case a:1.8°C/W; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:30V; Voltage, Vgs th max:2V; Voltage, Vgs th min:1V