Infineon IRLML6302TRPBF
$ 0.334
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRLML6302TRPBF | 30 | 1 | |||||||||
| Future Electronics | IRLML6302TRPBF | 0 | 3K | Tape & Reel | ||||||||
| RS (Formerly Allied Electronics) | IRLML6302TRPBF | 0 | 6K | Bulk | 10h | |||||||
| Farnell | IRLML6302TRPBF | 0 | 1 | Custom Reel | 8h | |||||||
| Microchip USA | IRLML6302TRPBF | 242 | 3500 | 4d |
Historial de existencias
Tendencia de 3 meses: -21.42%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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1 piezas disponibles
Modelos CAD
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Componentes alternativos
Este componente
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Price @ 1000
$ 0.334
$ 0.099
Stock
13,525,223
241,403
Authorized Distributors
4
3
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
TO-236-3
Drain to Source Voltage (Vdss)
-20 V
-20 V
Continuous Drain Current (ID)
540 mA
780 mA
Threshold Voltage
-1.5 V
-
Rds On Max
600 mΩ
600 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
540 mW
540 mW
Input Capacitance
97 pF
97 pF
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2024-07-31
LTD Date2025-01-31
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Descripciones
Descripciones de Infineon IRLML6302TRPBF suministradas por sus distribuidores.
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.6Ohm;ID -0.78A;Micro3;PD 540mW;VGS +/-12V
Power MOSFET, P Channel, 20 V, 780 mA, 600 Milliohms, SOT-23, 3 Pins, Surface Mount
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P, MICRO3; Transistor Polarity:P Channel; Continuous Drain Current Id:-610mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:540mW; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-780mA; Package / Case:Micro3; Power Dissipation Pd:540mW; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-1.5V; Voltage Vgs Rds on Measurement:-4.5V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -780 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 12 / Fall Time ns = 22 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) mW = 540
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -21.42%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)540 mA
Current Rating-620 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance97 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation540 mW
Manufacturer Package IdentifierMicro3
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-1.5 V
Number of Elements1
On-State Resistance600 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation540 mW
Rds On Max600 mΩ
Resistance600 mΩ
Rise Time18 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-1.5 V
Turn-Off Delay Time22 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento