Infineon IRLML0030TRPBF
$ 0.153
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLML0030TRPBF | 15.000 | 3K | 3d | ||||||||
| Newark | IRLML0030TRPBF | 30.856 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRLML0030TRPBF | 381.933 | 1 | |||||||||
| DigiKey | IRLML0030TRPBFCT-ND | 115.452 | 1 | Cut Tape | ||||||||
| Future Electronics | IRLML0030TRPBF | 0 | 3K | Tape & Reel |
Historial de existencias
Tendencia de 3 meses: -3.81%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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0 piezas disponibles
Modelos CAD
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-28
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
Componentes relacionados
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Transistor: N-MOSFET; unipolar; 30V; 5A; 29ohm; 1.3W; -55+150 deg.C; SMD; SOT23
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Single N-Channel 30 V 50 mOhm 6 nC 0.78 W Silicon Surface Mount Mosfet - SOT-23
Descripciones
Descripciones de Infineon IRLML0030TRPBF suministradas por sus distribuidores.
Transistor: N-MOSFET; unipolar; 30V; 5.3A; 27ohm; 1.3W; -55+150 deg.C; SMD; SOT23
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
MOSFET N-CH 30V 5.3A SOT-23-3 / Trans MOSFET N-CH 30V 5.3A 3-Pin SOT-23 T/R
Single N-Channel 30 V 40 mOhm 2.6 nC HEXFET® Power Mosfet - SOT-23
Transistor MOSFET N-Ch. 5,2A/30V SOT23 IRLML0030TRPBF
Power MOSFET, N Channel, 30 V, 5.3 A, 0.027 ohm, SOT-23, Surface Mount
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
30V 5.3A 1.3W 27m´Î@10V5.2A 2.3V@25Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:5.3A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.027ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes
MOSFET, N CH, 30V, 5.3A, SOT23-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
N-Channel MOSFET, 30V drain-source voltage, 5.3A continuous drain current, and 0.027 ohm on-resistance. Features a 1.7V nominal gate-source voltage and 1.7V threshold voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W. Packaged in a compact SOT-23 (TO-236AB) surface-mount case, this silicon metal-oxide semiconductor FET is HALOGEN FREE and ROHS COMPLIANT. Includes 5.2ns turn-on and 7.4ns turn-off delay times.
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -3.81%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance382 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Channels1
Number of Elements1
On-State Resistance27 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max27 mΩ
Recovery Time17 ns
Resistance27 MΩ
Rise Time4.4 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time7.4 ns
Turn-On Delay Time5.2 ns
Dimensions
Height1.12 mm
Length3.0226 mm
Width1.397 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento