Infineon IRLL3303PBF
$ 0.92
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IRLL3303PBF desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-04-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Componentes relacionados
InfineonIRLL3303TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.031Ohm;ID 4.6A;SOT-223;PD 1W;VGS +/-16V
Diodes Inc.DMN3032LE-13
N-Channel 30 V 29 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223
Descripciones
Descripciones de Infineon IRLL3303PBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.031Ohm;ID 4.6A;SOT-223;PD 1W;VGS +/-16V
Single N-Channel 30 V 31 mOhm 34 nC HEXFET® Power Mosfet - SOT-223
30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
Infineon SCT
Trans MOSFET, N-CH 30V, 4.6A, 31mOHM, 4-Pin(3+Tab) SOT-223 Pb free
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W
HEXFET POWER MOSFET Small Signal Field-Effect Transistor
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 30V, 4.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.6A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:60°C/W; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.1W; Power Dissipation Pd:2.1W; Pulse Current Idm:37A; SMD Marking:LL3303; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins3
Number of Terminals4
Technical
Continuous Drain Current (ID)4.6 A
Current Rating4.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance31 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance840 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements1
On-State Resistance31 mΩ
Package Quantity1760
Power Dissipation2.1 W
Rds On Max31 mΩ
Recovery Time98 ns
Resistance31 MΩ
Rise Time22 ns
Threshold Voltage1 V
Turn-Off Delay Time33 ns
Turn-On Delay Time7.2 ns
Voltage Rating (DC)30 V
Dimensions
Height1.8 mm
Length6.6802 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento