Infineon IRG4PC50WPBF
$ 9.95
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-09-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-06-30
LTD Date2020-12-31
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Descripciones
Descripciones de Infineon IRG4PC50WPBF suministradas por sus distribuidores.
Transistor IGBT Chip N Channel 600 Volt 55 Amp 3-Pin 3+ Tab TO-247AA
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
Infineon SCT
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.3 V Current release time: 62 ns Power dissipation: 200 W
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:55A; Collector Emitter Saturation Voltage, Vce(sat):2.3V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.3V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50W; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:33ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current55 A
Current Rating55 A
Element ConfigurationDual
Fall Time86 ns
Max Collector Current55 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity400
PackagingBulk
Power Dissipation200 W
Rise Time33 ns
TerminationThrough Hole
Turn-Off Delay Time120 ns
Turn-On Delay Time46 ns
Voltage Rating (DC)600 V
Dimensions
Height24.99 mm
Length15.875 mm
Width5.3 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento