Infineon IRFZ24NSPBF
$ 1.28
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 1.28
$ 0.925
$ 0.925
Stock
61,367
187,197
187,197
Authorized Distributors
2
4
4
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
17 A
17 A
17 A
Threshold Voltage
4 V
4 V
4 V
Rds On Max
70 mΩ
70 mΩ
70 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
3.8 W
3.8 W
3.8 W
Input Capacitance
370 pF
370 pF
370 pF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-09-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-09-19
LTD Date2013-03-19
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Descripciones
Descripciones de Infineon IRFZ24NSPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.07Ohm;ID 17A;D2Pak;PD 45W;VGS +/-20V;Qg 20
Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):70mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
MOSFET, N, 55V, 17A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:45W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:71mJ; Capacitance Ciss Typ:370pF; Current Iar:10A; Current Id Max:17A; Current Idss Max:25µA; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.16mm; Fall Time tf:27ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:3.3°C/W; N-channel Gate Charge:20nC; No. of Transistors:1; On State resistance @ Vgs = 10V:70mohm; Package / Case:D2-PAK; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:68A; Reverse Recovery Time trr Typ:56ns
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance370 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation3.8 W
Rds On Max70 mΩ
Resistance70 mΩ
Rise Time34 ns
Threshold Voltage4 V
Turn-Off Delay Time19 ns
Turn-On Delay Time4.9 ns
Voltage Rating (DC)55 V
Dimensions
Height4.957 mm
Width10.16 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento