Infineon IRFS7440TRLPBF
$ 1.271
Production
Precio y existencias
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Distribuidores no autorizados
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Distribuidor
SKU
Mín.
Pkg
Precios por volumen
Historial de existencias
Tendencia de 3 meses: +36.21%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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1 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IRFS7440TRLPBF desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | SímboloFootprint | Descargar | |
 Ultra Librarian | SímboloFootprint | Descargar |
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Price @ 1000
$ 1.271
$ 2.36
Stock
735,418
46,042
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
120 A
120 A
Threshold Voltage
3 V
3 V
Rds On Max
2.5 mΩ
2.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
208 W
208 W
Input Capacitance
4.73 nF
4.73 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-10
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descripciones
Descripciones de Infineon IRFS7440TRLPBF suministradas por sus distribuidores.
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 40 V 2.5 mOhm 90 nC HEXFET® Power Mosfet - D2PAK
Infineon NChannelMOSTube, Vds=100 V, 130 A, TO-220encapsulation, A printed circuit board
Trans MOSFET N-CH 40V 208A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 40V, 120A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 208 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 2 / Gate-Source Voltage V = 20 / Fall Time ns = 68 / Rise Time ns = 68 / Turn-OFF Delay Time ns = 115 / Turn-ON Delay Time ns = 24 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 208
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +36.21%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time68 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.73 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation208 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance2.5 mΩ
Package Quantity800
Power Dissipation208 W
Rds On Max2.5 mΩ
Resistance2.5 MΩ
Rise Time68 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time115 ns
Turn-On Delay Time24 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Declaraciones de cumplimiento