Infineon IRFR5410TRPBF
$ 0.59
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRFR5410TRPBF | 826.000 | 2K | 16h | ||||||||
| Newark | IRFR5410TRPBF | 3997 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRFR5410TRPBF | 1647 | 1 | |||||||||
| Future Electronics | IRFR5410TRPBF | 102.000 | 2K | Tape & Reel | ||||||||
| Rochester Electronics | IRFR5410TRPBF | 14 | 14h |
Historial de existencias
Tendencia de 3 meses: -8.27%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IRFR5410TRPBF desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | 3D | Descargar |
 Ultra Librarian | SímboloFootprint | Descargar |
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Este componente
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Price @ 1000
$ 0.59
$ 1.19
Stock
3,813,300
257,195
Authorized Distributors
6
4
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-252-3
Drain to Source Voltage (Vdss)
-100 V
-100 V
Continuous Drain Current (ID)
13 A
13 A
Threshold Voltage
-4 V
-
Rds On Max
205 mΩ
205 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
66 W
66 W
Input Capacitance
760 pF
760 pF
Cadena de suministros
Country of OriginMainland China, USA
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-06-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descripciones
Descripciones de Infineon IRFR5410TRPBF suministradas por sus distribuidores.
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W
Power MOSFET, P Channel, 100 V, 13 A, 0.205 ohm, TO-252AA, Surface Mount
Trans MOSFET P-CH Si 100V 13A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 100V 13A DPAK
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3
Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:66W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFR5410TRPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 13 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 205 / Gate-Source Voltage V = 20 / Fall Time ns = 46 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 66
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -8.27%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)13 A
Current Rating-13 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance205 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance760 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation66 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance205 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation66 W
Rds On Max205 mΩ
Resistance205 mΩ
Rise Time58 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-100 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento