Infineon IRFR5305PBF
$ 0.194
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRFR5305PBF | 1 | 1 | |||||||||
| RS (Formerly Allied Electronics) | IRFR5305PBF | 0 | 1125 | Bulk | 16h | |||||||
| Farnell | IRFR5305PBF | 0 | 5 | 9h | ||||||||
| Win Source | WS-IRFR5305PBF | 74.400 | 190 | 38m | ||||||||
| Worldway Electronics | IRFR5305PBF | 18.360 | 7 | Tube | 23h |
Fichas técnicas y documentos
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Descripciones
Descripciones de Infineon IRFR5305PBF suministradas por sus distribuidores.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W
Single P-Channel 55 V 0.065 Ohm 42 nC HEXFET® Power Mosfet - TO-252AA
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, -55V, -28A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-31A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:110A; SMD Marking:IRFR5305; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)31 A
Current Rating-31 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage-55 V
Element ConfigurationSingle
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation69 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance65 mΩ
Package Quantity3000
Power Dissipation89 W
Rds On Max65 mΩ
Recovery Time110 ns
Rise Time66 ns
TerminationSMD/SMT
Threshold Voltage-4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-55 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRFR5305PBF.
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento