Infineon IRFR13N20DTRPBF
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFR13N20DTRPBF | 0 | 2K | Bulk | 10h | |||||||
| Farnell | IRFR13N20DTRPBF | 0 | 1 | Cut Tape | 16h | |||||||
| Win Source | WS-IRFR13N20DTRPBF | 1320 | 60 | 18h | ||||||||
| Worldway Electronics | IRFR13N20DTRPBF | 18.834 | 7 | Tape & Reel | 18h | |||||||
| UnikeyIC | IRFR13N20DTRPBF | 2000 | 10 | Tape & Reel | 34m |
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 1.08
Stock
298,260
129,472
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
13 A
13 A
Threshold Voltage
-
5.5 V
Rds On Max
235 mΩ
235 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
110 W
110 W
Input Capacitance
830 pF
830 pF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-10-31
LTD Date2021-04-30
Componentes relacionados
InfineonIRFR13N15DPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.18Ohm;ID 14A;D-Pak (TO-252AA);PD 86W
InfineonIRFR6215PBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
Descripciones
Descripciones de Infineon IRFR13N20DTRPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.235Ohm;ID 13A;D-Pak (TO-252AA);PD 110W
Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - TO-252AA
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):235mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)13 A
Current Rating13 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance235 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance830 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance235 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation110 W
Rds On Max235 mΩ
Resistance235 mΩ
Rise Time27 ns
Schedule B8541290080
Turn-Off Delay Time17 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)200 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento