Infineon IRFL4105PBF
$ 0.75
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-05-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Componentes relacionados
InfineonIRFL4105TRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.045Ohm;ID 3.7A;SOT-223;PD 1W;VGS +/-20V
InfineonIRFL024NTRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V
InfineonIRFL024NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V
VishayIRFL014TRPBF
IRFL014TRPBF N-CHANNEL MOSFET TRANSISTOR, 2.7 A, 60 V, 3 + TAB-PIN SOT-223
VishayIRFL014PBF.
MOSFET, POWER, N-CH, VDSS 60V, RDS(ON) 0.2OHM, ID 2.7A, SOT-223,PD 3.1W, VGS +/-20V
Descripciones
Descripciones de Infineon IRFL4105PBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.045Ohm;ID 3.7A;SOT-223;PD 1W;VGS +/-20V
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
Infineon SCT
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W
Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 Tube
Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:55V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.1W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.7A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.1W; Power Dissipation Pd:2.1W; Pulse Current Idm:30A; SMD Marking:FL4105; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3.7 A
Current Rating3.7 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance660 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance45 mΩ
Package Quantity1760
PackagingBulk
Power Dissipation2.1 W
Rds On Max45 mΩ
Recovery Time82 ns
Resistance45 mΩ
Rise Time12 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time19 ns
Turn-On Delay Time7.1 ns
Voltage Rating (DC)55 V
Dimensions
Height1.8 mm
Length6.6802 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento