Infineon IRFH5110TRPBF

Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
$ 0.622
Obsolete
Página del fabricanteFicha técnica

Precio y existencias

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DistributorSKUMinPkg
Arrow ElectronicsIRFH5110TRPBF4891
Rochester ElectronicsIRFH5110TRPBF296
15h
RS (Formerly Allied Electronics)IRFH5110TRPBF04KBulk
8h
Farnell
2
IRFH5110TRPBF121Cut Tape
15h
VericalIRFH5110TRPBF4893

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para Infineon IRFH5110TRPBF.

element14 APAC

Datasheet10 páginasHace 11 años

IHS

Newark

RS (Formerly Allied Electronics)

Historial de existencias

Tendencia de 3 meses:
-4.10%
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Componentes alternativos

Este componente
Componentes alternativos
InfineonIRFH5110TRPBF
InfineonIRFH5110TR2PBF
Price @ 1000
$ 0.622
$ 1.59
Stock
443,181
242,460
Authorized Distributors
4
3
Mount
Surface Mount
Surface Mount
Case/Package
QFN
QFN
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
11 A
11 A
Threshold Voltage
4 V
4 V
Rds On Max
12.4 mΩ
12.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.6 W
114 W
Input Capacitance
3.152 nF
3.152 nF

Cadena de suministros

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-03-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-05-15
LTD Date2023-11-15

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Descripciones

Descripciones de Infineon IRFH5110TRPBF suministradas por sus distribuidores.

Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Future Electronics
100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
Infineon SCT
MOSFET, N-CH, 100V, 63A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Available until stocks are exhausted Alternative available
Farnell
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
Newark
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.4 / Gate-Source Voltage V = 20 / Fall Time ns = 6.4 / Rise Time ns = 9.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 114
Distrelec

Imágenes

element14
RS
RS (Formerly Allied Electronics)
TME
Distrelec
International Rectifier

Alias de fabricantes

Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • IRFH5110
  • IRFH5110TRPBF.
  • SP001560340