Infineon IRFB4115PBF
$ 1.04
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -10.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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1 piezas disponibles
Fichas técnicas y documentos
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Modelos CAD
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|---|---|---|---|
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 EE Concierge | SímboloFootprint | ||
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Price @ 1000
$ 1.04
$ 7.08
Stock
1,278,375
63,616
Authorized Distributors
6
1
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
104 A
104 A
Threshold Voltage
5 V
-
Rds On Max
11 mΩ
11 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
380 W
380 W
Input Capacitance
5.27 nF
5.27 nF
Cadena de suministros
Country of OriginTaiwan, USA
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-11-10
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
Componentes relacionados
InfineonIRFB4115GPBF
150V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
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150V Single N-Channel PDP Switch HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Descripciones
Descripciones de Infineon IRFB4115PBF suministradas por sus distribuidores.
Single N-Channel 150V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 150 V, 104 A, 0.0093 ohm, TO-220AB, Through Hole
Trans MOSFET N-CH 150V 104A 3-Pin(3+Tab) TO-220AB Tube
MOSFET, 150V, 104A, 11 mOhm, 77 nC Qg, TO220AB
HEXFET POWER MOSFET Power Field-Effect Transistor, 104A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 150V, 104A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:104A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRFB4115PBF.
MOSFET, N-CH 150V 104A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -10.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)104 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.27 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance11 mΩ
Package Quantity1000
Power Dissipation380 W
Rds On Max11 mΩ
Rise Time73 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time41 ns
Turn-On Delay Time18 ns
Dimensions
Height19.8 mm
Length10.668 mm
Width4.826 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRFB4115PBF.
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento