Infineon IRF9520NPBF
$ 0.92
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF9520NPBF | 0 | 700 | Bulk | 5h | |||||||
| Farnell | IRF9520NPBF | 0 | 1 | 1d | ||||||||
| Microchip USA | IRF9520NPBF | 229 | 3500 | Tube | 5h | |||||||
| Weyland Electronics Group Pte. Ltd. | IRF9520NPBF | 2800 | 1 | Tape & Reel | 15h | |||||||
| Win Source | WS-IRF9520N | 2800 | 3 | 13h |
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IRF9520NPBF desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-10-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
Componentes relacionados
InfineonIRF520NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 9.7A;TO-220AB;PD 48W;VGS +/-20V
Descripciones
Descripciones de Infineon IRF9520NPBF suministradas por sus distribuidores.
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.48Ohm;ID -6.8A;TO-220AB;PD 48W;VGS +/-20
INFINEON IRF9520NPBF MOSFET Transistor, P Channel, 6.8 A, -100 V, 480 mohm, -10 V, -4 V
Single P-Channel 100 V 0.48 Ohm 27 nC HEXFET® Power Mosfet - TO-220-3
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, PG-TO220-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):480mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:48W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-6.8A; Current Temperature:25°C; Device Marking:IRF9520N; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:27A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -6.8 / Drain-Source Voltage (Vds) V = -100 / ON Resistance (Rds(on)) mOhm = 480 / Gate-Source Voltage V = 20 / Fall Time ns = 31 / Rise Time ns = 47 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6.8 A
Current Rating-6.8 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance480 mΩ
Drain to Source Voltage (Vdss)-100 V
Dual Supply Voltage-100 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance480 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation47 W
Recovery Time150 ns
Resistance480 mΩ
Rise Time47 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time28 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-100 V
Dimensions
Height20.56 mm
Lead Pitch2.54 mm
Length10.54 mm
Width4.69 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento