Infineon IRF8910PBF
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF8910PBF | 0 | 3800 | Bulk | 18h | |||||||
| Farnell | IRF8910PBF | 0 | 1 | 12h | ||||||||
| Sensible Micro | IRF8910PBF | 358 | 6d | |||||||||
| Win Source | WS-IRF8910PBF | 3610 | 70 | 2h | ||||||||
| Worldway Electronics | IRF8910PBF | 9656 | 7 | Tube | 31m |
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-08-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Descripciones
Descripciones de Infineon IRF8910PBF suministradas por sus distribuidores.
Dual N-Channel 20 V 2 W 7.4 nC Hexfet Power Mosfet Surface Mount - SOIC-8
Trans MOSFET Array Dual N-CH 20V 10A 8-Pin SOIC
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
TRANSISTOR,IRF8910,PWR MOSFET,SO8,SMD
Benefits: RoHS Compliant; Low RDS(on); Low RDS(ON) at 4.5V VGS; Ultra-Low Gate Impedance; Dual N-Channel MOSFET
Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
IRF8910PBF,20V DUAL N-CHANNEL HEXFET PLCC32<NV
TRANSISTOR, MOSFET; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.55V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:10A; Current Id Max:10A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):13.4mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:2.55V; Voltage Vgs Rds on Measurement:10V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance13.4 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationDual
Fall Time4.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance960 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs2.55 V
Number of Channels2
Number of Elements2
On-State Resistance13.4 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2 W
Rds On Max13.4 mΩ
Resistance13.4 MΩ
Rise Time10 ns
TerminationSMD/SMT
Threshold Voltage2.55 V
Turn-Off Delay Time9.7 ns
Turn-On Delay Time6.2 ns
Voltage Rating (DC)20 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento