Infineon IRF7416TRPBF
$ 0.484
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRF7416TRPBF | 12.000 | 4K | 3d | ||||||||
| Newark | IRF7416TRPBF | 520 | 1 | Cut Tape | ||||||||
| Future Electronics | IRF7416TRPBF | 16.000 | 4K | Tape & Reel | ||||||||
| Arrow Electronics | IRF7416TRPBF | 73.532 | 1 | |||||||||
| DigiKey | IRF7416TRPBFCT-ND | 2497 | 1 | Cut Tape |
Historial de existencias
Tendencia de 3 meses: -6.35%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | 3D | Descargar |
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Cadena de suministros
Country of OriginMainland China, Malaysia, Philippines, Taiwan, Thailand, Usa
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-06-27
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descripciones
Descripciones de Infineon IRF7416TRPBF suministradas por sus distribuidores.
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS +/-20V;-55
Single P-Channel 30 V 0.035 Ohm 92 nC HEXFET® Power Mosfet - SOIC-8
Power MOSFET, P Channel, 30 V, 10 A, 0.02 ohm, SOIC, Surface Mount
2.5W(Ta) 20V 1V@ 250¦ÌA 92nC@ 10 V 1P 30V 20m¦¸@ 5.6A,10V 10A 1.7nF@25V SOIC-8 1.75mm
30V 10A 20m¦¸@10V,5.6A 2.5W 2.04V@250¦ÌA P Channel SOIC-8_150mil MOSFETs ROHS
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-10A; On Resistance, Rds(on):0.02ohm; Package/Case:8-SOIC; Power Dissipation, Pd:2.5W; Current, Idm pulse:45A ;RoHS Compliant: Yes
Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
MOSFET, P, 30V, SO-8; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:30V; Current, Id Cont:10A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:45A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation:2.5W; Power, Pd:2.5W; Row Pitch:6.3mm; SMD Marking:F7416; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Rds Measurement:10V; Voltage, Vds:30V; Voltage, Vds Max:30V; Width, External:4.05mm
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -6.35%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)10 A
Current Rating-10 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-20 V
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max20 mΩ
Resistance20 mΩ
Rise Time49 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-2.04 V
Turn-Off Delay Time59 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Row Spacing6.3 mm
Width3.9878 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento