Infineon IRF7416PBF

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS +/-20V;-55

Transistor: P-MOSFET; unipolar; -30V; -10A; 0.02ohm; 2.5W; -55+150 deg.C; SMD; SO8

Single P-Channel 30 V 0.02 Ohm 61 nC HEXFET® Power Mosfet - SOIC-8

MOSFET P-CH 30V 10A 8SO P-Channel 30 V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO

Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R

-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

HEXFET POWER MOSFET Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

MOSFET, P, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-10A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:45A; Row Pitch:6.3mm; SMD Marking:F7416; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V