Infineon IRF7316TRPBF
$ 0.506
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRF7316TRPBF | 9681 | 5 | Cut Tape | ||||||||
| Future Electronics | IRF7316TRPBF | 20.000 | 4K | Tape & Reel | ||||||||
| Rochester Electronics | IRF7316TRPBF | 6054 | 8h | |||||||||
| Arrow Electronics | IRF7316TRPBF | 3665 | 1 | |||||||||
| DigiKey | IRF7316PBFCT-ND | 18.400 | 1 | Cut Tape |
Historial de existencias
Tendencia de 3 meses: +0.41%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRF7316TRPBF.
Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | 3D | Descargar |
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.506
$ 1.458
$ 1.458
Stock
3,048,647
329,829
329,829
Authorized Distributors
6
4
4
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
SOIC
Drain to Source Voltage (Vdss)
-30 V
-30 V
-30 V
Continuous Drain Current (ID)
4.9 A
4.9 A
4.9 A
Threshold Voltage
-1 V
-1 V
-1 V
Rds On Max
58 mΩ
58 mΩ
58 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2 W
2 W
2 W
Input Capacitance
710 pF
710 pF
710 pF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-02-24
Lifecycle StatusProduction (Last Updated: 4 months ago)
Componentes relacionados
Descripciones
Descripciones de Infineon IRF7316TRPBF suministradas por sus distribuidores.
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.042Ohm;ID -4.9A;SO-8;PD 2W;VGS +/-20
Trans MOSFET P-CH 30V 4.9A 8-Pin SOIC N T/R / MOSFET 2P-CH 30V 4.9A 8-SOIC
Dual P-Channel 30 V 0.098 Ohm 34 nC HEXFET® Power Mosfet - SOIC-8
HEXFET POWER MOSFET Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL P CH, -30V, -4.9A, SOIC-8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-4.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Volta
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Channel Type:Dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:4.9A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon Technologies IRF7316TRPBF.
Transistor Polarity = P-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 58 / Gate-Source Voltage V = 20 / Fall Time ns = 32 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +0.41%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.9 A
Current Rating-4.9 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance58 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationDual
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance710 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
On-State Resistance58 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max58 mΩ
Resistance58 mΩ
Rise Time13 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time34 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRF7316TRPBF.
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento