Infineon IRF6894MTRPBF
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-28
Lifecycle StatusProduction (Last Updated: 1 week ago)
LTB Date2020-07-15
LTD Date2021-01-15
Componentes relacionados
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MOSFET N-CH 25V 39A DIRECTFET / Trans MOSFET N-CH Si 25V 39A 7-Pin Direct-FET MX T/R
InfineonIRF6717MTRPBF
Trans MOSFET N-CH Si 25V 38A 7-Pin Direct-FET MX T/R / MOSFET N-CH 25V 38A DIRECTFET
Descripciones
Descripciones de Infineon IRF6894MTRPBF suministradas por sus distribuidores.
Single N-Channel 25 V 1.3 mOhm 39 nC HEXFET® Power Mosfet - DirectFET®
A 25V Single N-Channel HEXFET Power MOSFET plus Schottky Diode in a DirectFET MX package rated at 33 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, N CH/SCHOTTKY, 25V, DIRECTFET MX; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id: 163A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 900µohm; Rds(on) Test Voltage Vgs: 10V; Threshold V
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance; Integrated Monolithic Sckottky Diode | Target Applications: MultiPhase SyncFET
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
MountSurface Mount
Number of Terminals3
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.2 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time14 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance4.13 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation54 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage25 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance1.3 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max1.3 mΩ
Resistance1.3 MΩ
Rise Time42 ns
Schedule B8541290080
Turn-Off Delay Time23 ns
Turn-On Delay Time17 ns
Dimensions
Height6.35 mm
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Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento