Infineon IRF6725MTRPBF
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-14
Lifecycle StatusProduction (Last Updated: 3 months ago)
LTB Date2019-11-15
LTD Date2020-05-15
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Descripciones
Descripciones de Infineon IRF6725MTRPBF suministradas por sus distribuidores.
Single N-Channel 30 V 2.2 mOhm 54 nC HEXFET® Power Mosfet - DirectFET®
Trans MOSFET N-CH 30V 28A 7-Pin Direct-FET MX T/R
N CH MOSFET, 30V, 28A DIRECTFET MX
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
HEXFET Power MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:170A; On Resistance, Rds(on):1.7mohm; Rds(on) Test Voltage, Vgs:20V ;RoHS Compliant: Yes
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance2.2 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation100 W
Rds On Max2.2 mΩ
Rise Time22 ns
Threshold Voltage1.8 V
Turn-Off Delay Time19 ns
Turn-On Delay Time16 ns
Dimensions
Height506 µm
Length6.35 mm
Width5.05 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento