Infineon IRF630NSTRLPBF
$ 1.63
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF630NSTRLPBF | 0 | 16 | Bulk | 13h | |||||||
| Farnell | IRF630NSTRLPBF | 0 | 1 | Cut Tape | 7h | |||||||
| Microchip USA | IRF630NS | 212 | 600 | Tray | 14h | |||||||
| Component Stockers USA | IRF630NSTRLPBF | 3742 | 1d | |||||||||
| Weyland Electronics Group Pte. Ltd. | IRF630NSTRLPBF | 2562 | 1 | Tape & Reel | 1d |
Fichas técnicas y documentos
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 1.63
$ 1.33
Stock
581,466
127,886
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
9.3 A
9.3 A
Threshold Voltage
-
4 V
Rds On Max
300 mΩ
300 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
82 W
82 W
Input Capacitance
575 pF
575 pF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-12-31
LTD Date2024-06-30
Componentes relacionados
InfineonIRF6215STRLPBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;D2Pak;PD 110W;VGS +/-20V
Descripciones
Descripciones de Infineon IRF630NSTRLPBF suministradas por sus distribuidores.
Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) | MOSFET N-CH 200V 9.3A D2PAK
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
IRF630NSTRLPBF,MOSFET, 200V, 9 .5A, 300 MOHM, 23.3 NC QG, D2
HEXFET POWER MOSFET Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Tra; N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.3 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 300 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 27 / Turn-ON Delay Time ns = 7.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 82
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)9.3 A
Current Rating9.3 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance575 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation82 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance300 mΩ
Package Quantity800
PackagingBulk
Power Dissipation82 W
Rds On Max300 mΩ
Resistance300 mΩ
Rise Time14 ns
Schedule B8541290080
Turn-Off Delay Time27 ns
Turn-On Delay Time7.9 ns
Voltage Rating (DC)200 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRF630NSTRLPBF.
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento