Infineon IRF5803TRPBF
$ 0.169
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
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Historial de existencias
Tendencia de 3 meses: +47.76%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-12-31
LTD Date2026-12-31
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Descripciones
Descripciones de Infineon IRF5803TRPBF suministradas por sus distribuidores.
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
Infineon SCT
MOSFET, P-CHANNEL, -40V, -3.4A, 112 MOHM, 25 NC QG, TSOP-6
Single P-Channel 40 V 190 mOhm 37 nC HEXFET® Power Mosfet - TSOP-6
Power Field-Effect Transistor, 3.4A I(D), 40V, 0.112ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
Transistor Polarity:p Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.4A; On Resistance Rds(On):0.112Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:-Rohs Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET,P,40V,3.4A,TSOP6; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:40V; On Resistance Rds(on):112mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:2W; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Application Code:LowR; Cont Current Id @ 25°C:3.4A; Cont Current Id @ 70°C:2.7; Current Id Max:-3.4A; Junction to Case Thermal Resistance A:62.5°C/W; Package / Case:TSOP; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:27A; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:-40V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +47.76%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)3.4 A
Current Rating-3.4 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance112 mΩ
Drain to Source Voltage (Vdss)-40 V
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.11 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance112 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max112 mΩ
Resistance112 MΩ
Rise Time550 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time88 ns
Turn-On Delay Time43 ns
Voltage Rating (DC)-40 V
Dimensions
Height1.45 mm
Length3.1 mm
Width1.4986 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento