onsemi FDC6561AN
$ 0.286
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +24.56%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
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 EE Concierge | SímboloFootprint | ||
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Cadena de suministros
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi FDC6561AN suministradas por sus distribuidores.
Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ
Transistor MOSFET Array Dual N-CH 30V 2.5A 6-Pin TSOT-23 T/R
Avnet Japan
Transistor MOSFET N-Channel 30 Volt 2.5A 6-Pin SuperSOT
DUAL N-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.
MOSFET, DUAL, NN, SUPERSOT-6; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:10A; SMD Marking:FDC6561AN; Termination Type:SMD; Uni / Bi Directional Polarity:NN; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +24.56%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)2.5 A
Current24 A
Current Rating2.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance95 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance220 pF
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements2
PackagingCut Tape
Power Dissipation960 mW
Rds On Max95 mΩ
Resistance95 mΩ
Rise Time10 ns
Schedule B8541210080
Turn-Off Delay Time12 ns
Turn-On Delay Time6 ns
Voltage30 V
Voltage Rating (DC)30 V
Dimensions
Height1 mm
Length3 mm
Width1.7 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento