Infineon IRF2807ZSTRLPBF
$ 1.11
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF2807ZSTRLPBF | 27.268 | 16h | |||||||||
| Future Electronics | IRF2807ZSTRLPBF | 0 | 800 | Tape & Reel | ||||||||
| RS (Formerly Allied Electronics) | IRF2807ZSTRLPBF | 0 | 10 | Bulk | 8h | |||||||
| Farnell | IRF2807ZSTRLPBF | 0 | 1 | Cut Tape | 1h | |||||||
| Microchip USA | IRF2807ZSTRLPBF | 2056 | 600 | 8h |
Historial de existencias
Tendencia de 3 meses: Restocked
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IRF2807ZSTRLPBF desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 1.11
$ 1.11
$ 1.11
Stock
260,673
260,673
260,673
Authorized Distributors
4
4
4
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
75 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
-
-
-
Rds On Max
9.4 mΩ
9.4 mΩ
9.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
170 W
170 W
170 W
Input Capacitance
3.27 nF
3.27 nF
3.27 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-04-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
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Descripciones
Descripciones de Infineon IRF2807ZSTRLPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.5Milliohms;ID 75A;D2Pak;PD 170W;VGS +/-20
Single N-Channel 75V 9.4 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
75V Single N-Channel HEXFET Power MOSFET in a D2Pak Package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 75V 89A 3-Pin(2+Tab) D2PAK T/R
Advanced Process Technology | MOSFET N-CH 75V 75A D2PAK
Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:75A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: Restocked
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins2
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance9.4 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.27 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance9.4 mΩ
Package Quantity800
PackagingBulk
Power Dissipation170 W
Rds On Max9.4 mΩ
Resistance7.4 MΩ
Rise Time79 ns
Schedule B8541290080
Turn-Off Delay Time40 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)75 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento