Infineon IRF2804LPBF

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 1.8Milliohms;ID 280A;TO-262;PD 330W;VF 1.3V

MOSFET N-CH 40V 75A TO262 N-Channel 40 V 75A (Tc) 300W (Tc) Through Hole TO-262

40V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

Power Field-Effect Transistor, 75A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

Infineon NChannel EnhancedMOSTube HEXFETseries, Vds=40 V, 75 A, I2PAK (TO-262)encapsulation, Through hole mounting, 3Pin

MOSFET, N, 40V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:280A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:200A; Cont Current Id @ 25°C:280A; Current Id Max:75A; Package / Case:D2-PAK; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:1080A; Rth:0.45; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.