Infineon IRFSL7437PBF
$ 1.499
Production
Precio y existencias
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SKU
Mín.
Pkg
Precios por volumen
Historial de existencias
Tendencia de 3 meses: +438%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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Modelos CAD
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|---|---|---|---|
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-09-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descripciones
Descripciones de Infineon IRFSL7437PBF suministradas por sus distribuidores.
Single N-Channel 40 V 1.8 mOhm 150 nC HEXFET® Power Mosfet - TO-262
MOSFET N-CH 40V 195A TO262 N-Channel 40 V 195A (Tc) 230W (Tc) Through Hole TO-262
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 195A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N-CH, 40V, 195A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 250 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 1.4 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 78 / Turn-ON Delay Time ns = 19 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 230
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +438%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.8 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time53 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.33 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance1.8 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max1.8 mΩ
Resistance1.8 MΩ
Rise Time70 ns
Threshold Voltage3 V
Turn-Off Delay Time78 ns
Turn-On Delay Time19 ns
Dimensions
Height15.01 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Declaraciones de cumplimiento