Infineon IPD80R1K0CEBTMA1
$ 0.603
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Fichas técnicas y documentos
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-11-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Descripciones
Descripciones de Infineon IPD80R1K0CEBTMA1 suministradas por sus distribuidores.
Trans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R
Power Field-Effect Transistor, 5.7A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-252-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)5.7 A
Drain to Source Resistance950 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance785 pF
Max Dual Supply Voltage800 V
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance950 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation83 W
Rds On Max950 mΩ
Rise Time15 ns
Turn-Off Delay Time72 ns
Turn-On Delay Time25 ns
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IPD80R1K0CEBTMA1.
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento