Infineon IKP15N60TXKSA1
$ 0.859
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IKP15N60TXKSA1 | 346 | 1 | |||||||||
| Avnet | IKP15N60TXKSA1 | 0 | 1K | 16h | ||||||||
| Farnell | IKP15N60TXKSA1 | 0 | 1 | 13h | ||||||||
| Mouser | 726-IKP15N60T | 6 | 1 | Tube | ||||||||
| Microchip USA | IKP15N60TXKSA1 | 1970 | 3K | Tube | 10h |
Historial de existencias
Tendencia de 3 meses: -89.48%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
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Cadena de suministros
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-11-10
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2026-03-15
LTD Date2026-09-15
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Descripciones
Descripciones de Infineon IKP15N60TXKSA1 suministradas por sus distribuidores.
Trans IGBT Chip N-CH 600V 26A 130mW Automotive 3-Pin(3+Tab) TO-220AB Tube
Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole
IGBT, General Purpose, 30 A, 2.05 V, 130 W, 600 V, TO-220, 3 Pins
Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, N, 600V, 15A, TO-220; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:15A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:130W; Power Dissipation Pd:130W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -89.48%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220-3
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.05 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Forward Voltage1.65 V
Max Collector Current26 A
Max Operating Temperature175 °C
Max Power Dissipation130 W
Min Operating Temperature-40 °C
Number of Elements1
Package Quantity500
Power Dissipation130 W
Reverse Recovery Time34 ns
Schedule B8541290080
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento