Infineon FF800R17KP4B2NOSA2

Trans IGBT Module N-CH 1700V 1.2KA 4850000mW Automotive 10-Pin IHM130-1 Tray
$ 880.103
EOL
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Precio y existencias

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DistributorSKUMinPkg
DigiKeyFF800R17KP4B2NOSA2-ND21Tray
AvnetFF800R17KP4B2NOSA202
22h
Arrow ElectronicsFF800R17KP4B2NOSA202
Mouser641-FF800R17KP4_B2151Tray
Microchip USAFF800R17KP4B2NOSA23755Tray
4d

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para Infineon FF800R17KP4B2NOSA2.

Infineon

Datasheet1 páginasHace 11 años

IHS

_legacy Avnet

iiiC

Farnell

Historial de existencias

Tendencia de 3 meses:
-5.56%
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Componentes alternativos

Este componente
Componentes alternativos
InfineonFF800R17KP4B2NOSA2
InfineonFF800R17KP4B2NOSA2
Price @ 1000
$ 880.103
$ 880.103
Stock
89,005
89,005
Authorized Distributors
4
4
Mount
Screw
Screw
Case/Package
Module
Module
Collector Emitter Breakdown Voltage
1.7 kV
1.7 kV
Max Collector Current
1.2 kA
1.2 kA
Power Dissipation
1.2 MW
1.2 MW
Collector Emitter Saturation Voltage
2.2 V
2.2 V
Reverse Recovery Time
-
-

Cadena de suministros

Country of OriginHungary
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-10
Lifecycle StatusEOL (Last Updated: 1 month ago)
LTB Date2027-04-15
LTD Date2027-12-15

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Descripciones

Descripciones de Infineon FF800R17KP4B2NOSA2 suministradas por sus distribuidores.

Trans IGBT Module N-CH 1700V 1.2KA 4850000mW Automotive 10-Pin IHM130-1 Tray
Verical
Transistor IGBT Module N-CH 1700V 1200A 20V Screw Mount Tray
EBV Elektronik
Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel
IHS
IGBT MOD 1700V 1200A A-IHV130-3
DigiKey
1700V IHM 130mm Dual IGBT Module with IGBT4, enlarged diode and AlSiC base-plate - The best solution for your traction and industry applications | Summary of Features: Low V(cesat); Enlarged Diode for regenerative operation; 4 kV AC 1min Insulation; AlSiC Base Plate for increased Thermal Cycling Capability; UL recognised; High Power and Thermal Cycling Capability | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav
Infineon
IGBT, DUAL MOD, 1700V, 800A; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:800A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:4.85kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Module; No. of Pins:10; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:4.85kW
element14 APAC

Imágenes

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Alias de fabricantes

Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • FF800R17KP4-B2
  • FF800R17KP4B2
  • FF800R17KP4_B2
  • SP000941492