Infineon AUIRF4104
$ 2.705
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | AUIRF4104 | 1324 | 23h | |||||||||
| RS (Formerly Allied Electronics) | AUIRF4104 | 0 | 5 | Bulk | 15h | |||||||
| Farnell | AUIRF4104 | 0 | 1 | 22h | ||||||||
| Microchip USA | AUIRF4104 | 322 | 600 | Bulk | 17h | |||||||
| Win Source | WS-AUIRF4104 | 123.400 | 30 | 1d |
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 2.705
$ 0.905
Stock
348,783
1,135,664
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220AB
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
2 V
4 V
Rds On Max
5.5 mΩ
5.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
140 W
140 W
Input Capacitance
3 nF
3 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-03-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Componentes relacionados
STMicroelectronicsSTP150NF04
N-channel 40 V, 0.005 Ohm, 80 A STripFET(TM) II Power MOSFET in TO-220 package
Descripciones
Descripciones de Infineon AUIRF4104 suministradas por sus distribuidores.
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 40V 120A Automotive 3-Pin(3+Tab) TO-220AB Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET, N CH, 40V, 75A, TO220AB; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Power Dissipation Pd:140W; Voltage Vgs Max:20V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance5.5 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance5.5 mΩ
Package Quantity1000
Power Dissipation140 W
Rds On Max5.5 mΩ
Rise Time130 ns
Threshold Voltage2 V
Turn-Off Delay Time38 ns
Turn-On Delay Time16 ns
Dimensions
Height9.017 mm
Length10.6426 mm
Width4.82 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento