Diodes Inc. BCW66HTA
$ 0.111
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -14.35%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Diodes Inc. BCW66HTA desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 SnapEDA | Footprint | Descargar | |
 Ultra Librarian | SímboloFootprint | Descargar |
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-02-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
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Descripciones
Descripciones de Diodes Inc. BCW66HTA suministradas por sus distribuidores.
45V 330mW 250@100mA,1V 800mA NPN SOT-23 Bipolar Transistors - BJT ROHS
45 V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors (BJT); BCW66HTA; DIODES; NPN; 3; 45 V; 800 mA
DIODES INC. - BCW66HTA - TRANSISTOR, NPN, 45V, 500mA, 330mW, SOT-23
BCW66H Series 45 V 800 mA NPN Surface Mount Small Signal Transistor - SOT-23-3
Trans GP BJT NPN 45V 0.8A 350mW 3-Pin SOT-23 T/R
TRANSISTOR, NPN, 45V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:330mW; DC Collector Current:500mA; DC Current Gain hFE:350hFE; Transisto
TRANSISTOR, NPN, 45V, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 330mW; DC Collector Current: 500mA; DC Current Gain hFE: 350hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 2V; Continuous Collector Current Ic Max: 800mA; Current Ib: 100mA; Current Ic Continuous a Max: 500mA; Current Ic hFE: 100mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 330mW; Termination Type: Surface Mount Device; Turn Off Time: 400ns; Turn On Time: 100ns; Voltage Vcbo: 75V
Alias de fabricantes
Diodes Inc. tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Diodes Inc. también podría ser conocido por los siguientes nombres:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Historial de existencias
Tendencia de 3 meses: -14.35%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)75 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)45 V
Continuous Collector Current800 mA
Current Rating800 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min180
Max Breakdown Voltage45 V
Max Collector Current800 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation330 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)45 V
Dimensions
Height1.1 mm
Length3 mm
Width1.4 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento