onsemi FDN340P
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Especificaciones técnicas
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)2 A
Current Rating-2 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance779 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Manufacturer Package IdentifierSuperSOT3
Min Operating Temperature-55 °C
Nominal Vgs-800 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time9 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-800 mV
Turn-Off Delay Time27 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-20 V
Dimensions
Height940 µm
Length2.92 mm
Width3.05 mm
Inventory History
3 month trend: +54.81%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FDN340P.
Farnell
element14 APAC
TME
Jameco
Fairchild Semiconductor
iiiC
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDN340P.
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onsemiFDN304P
P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.4A, 52mΩ
onsemiFDN335N
N-Channel PowerTrench™ MOSFET, 2.5V Specified, 20V, 1.7A, 70mΩ
Descripciones
Descripciones de onsemi FDN340P suministradas por sus distribuidores.
P-Channel PowerTrench® MOSFET, Logic Level, -20V, -2A, 70mΩ
Transistor MOSFET P Channel 20 Volt 2 Amp 3 Pin Supersot Tape and Reel
P-CHANNEL SINGLE WITH BUILT-IN DIODE 3 EAR99 Mosfet Transistor 2A 0.5W 20V 70Ohm
Trans MOSFET P-CH 20V 2A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 2A SSOT3
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications:load switching and power management, battery charging circuits, and DC/DC conversion.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -2 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 110 / Gate-Source Voltage V = 8 / Fall Time ns = 20 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 43 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +54.81%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Especificaciones técnicas
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)2 A
Current Rating-2 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance779 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Manufacturer Package IdentifierSuperSOT3
Min Operating Temperature-55 °C
Nominal Vgs-800 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time9 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-800 mV
Turn-Off Delay Time27 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-20 V
Dimensions
Height940 µm
Length2.92 mm
Width3.05 mm
Documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FDN340P.
Farnell
element14 APAC
TME
Jameco
Fairchild Semiconductor
iiiC
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Declaraciones de cumplimiento