Infineon BSS83PH6327XTSA1

Single P-Channel 60 V 2 Ohm 2.38 nC SIPMOS® Small Signal Mosfet - SOT-23

Transistor, SIPMOS, P-channel, enhancement mode, 60V, 0.33A, logic level, SOT23 | Infineon BSS83P

60V 330mA 2´Î@10V330mA 360mW 2V@80Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

Trans MOSFET P-CH 60V 0.33A Automotive 3-Pin SOT-23 T/R

Transistor P-Channel MOSFET; 60V; 20V; 3Ohm; 330mA; 360mW; -55°C ~ 150°C;; Equivalent: BSS83PH6327; BSS83PH6327XTSA1; BSS83P;

SIPMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.33A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:330mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:360mW; No. of Pins:3Pins RoHS Compliant: Yes

Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 330 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 2 / Gate-Source Voltage V = 20 / Fall Time ns = 61 / Rise Time ns = 71 / Turn-OFF Delay Time ns = 56 / Turn-ON Delay Time ns = 23 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 360