Infineon BSP372NH6327XTSA1

Trans MOSFET N-CH 100V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
Production

Precio y existencias

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Especificaciones técnicas

Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins4
Technical
Continuous Drain Current (ID)1.8 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance153 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance247 pF
Max Dual Supply Voltage100 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Manufacturer Package IdentifierPG-SOT223-4
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance230 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation1.8 W
Rds On Max230 mΩ
Rise Time6.7 ns
Schedule B8541290080
Threshold Voltage1.4 V
Turn-Off Delay Time47.3 ns
Turn-On Delay Time5.1 ns
Dimensions
Height1.7 mm

Documentos

Descargar fichas técnicas y documentación del fabricante para Infineon BSP372NH6327XTSA1.

Burklin Elektronik
Datasheet9 pages11 years ago

Historial de existencias

3 month trend:
+96.75%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon BSP372NH6327XTSA1.

Componentes relacionados

Descripciones

Descripciones de Infineon BSP372NH6327XTSA1 suministradas por sus distribuidores.

Trans MOSFET N-CH 100V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
Single N-Channel 100 V 270 mOhm 14.3 nC OptiMOS™ Power Mosfet - SOT-223
Trans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt:
MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Source Voltage Vds:100V; On Resistance
OPTIMOS SMALL-SIGNAL-TRANSISTOR Power Field-Effect Transistor, 1.8A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N-Ch, 100V, 1.8A, 150Deg C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V Rohs Compliant: Yes |Infineon BSP372NH6327XTSA1
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.153ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.8 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 230 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 6.7 / Turn-OFF Delay Time ns = 47.3 / Turn-ON Delay Time ns = 5.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8

Alias de fabricantes

Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • BSP372-NH6327
  • BSP372N
  • BSP372N H6327
  • BSP372NH6327
  • SP001059326

Especificaciones técnicas

Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins4
Technical
Continuous Drain Current (ID)1.8 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance153 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance247 pF
Max Dual Supply Voltage100 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Manufacturer Package IdentifierPG-SOT223-4
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance230 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation1.8 W
Rds On Max230 mΩ
Rise Time6.7 ns
Schedule B8541290080
Threshold Voltage1.4 V
Turn-Off Delay Time47.3 ns
Turn-On Delay Time5.1 ns
Dimensions
Height1.7 mm

Documentos

Descargar fichas técnicas y documentación del fabricante para Infineon BSP372NH6327XTSA1.

Burklin Elektronik
Datasheet9 pages11 years ago

Cumplimiento

Clasificación ambiental
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Declaraciones de cumplimiento