Vishay SI4427BDY-T1-GE3
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TTI Europe | SI4427BDY-T1-GE3 | 0 | 2500 | Tape & Reel | 21h | |||||||
| Farnell | SI4427BDY-T1-GE3.. | 0 | 1 | Cut Tape | 4h | |||||||
| element14 APAC | SI4427BDY-T1-GE3.. | 0 | 1 | Cut Tape | 7h | |||||||
| Component Stockers USA | SI4427BDY-T1-GE3 | 3.311 | >1wk | |||||||||
| Win Source | WS-SI4427BDY-T1-GE3 | 2.500 | 2 | 19h |
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InfineonIRF7467PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.4 Milliohms;ID 11A;SO-8;PD 2.5W;VGS +/-12V
Beschreibungen
Beschreibungen von Vishay SI4427BDY-T1-GE3, die von den Distributoren bereitgestellt werden.
Single P-Channel 30 V 0.0195 Ohm 70 nC 1.5 W Silicon SMT Mosfet - SOIC-8
Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R
MOSFET Devices; VISHAY; SI4427BDY-T1-GE3; 9.7 A; 12 V; 1.5 W; 242 ns
Small Signal Field-Effect Transistor, 9.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
Transistor; Transistor Polarity:P Channel; Continuous Drain Current, Id:-12.6A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.0195ohm; Rds(on) Test Voltage, Vgs:-2.5V; Threshold Voltage, Vgs Typ:-1.4V ;RoHS Compliant: Yes
Aliasnamen des Herstellers
Vishay verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Vishay ist möglicherweise auch unter den folgenden Namen bekannt:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Technische Spezifikationen
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)9.7 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance10.5 mΩ
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)12 V
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.5 W
Rds On Max10.5 mΩ
Resistance19.5 mΩ
Rise Time15 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-600 mV
Turn-Off Delay Time242 ns
Turn-On Delay Time12 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen