Beschreibungen von Vishay SI4412DY, die von den Distributoren bereitgestellt werden.
Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
MOSFET, N, SO-8; Transistor type:MOSFET; Voltage, Vds typ:30V; Current, Id cont:7A; Resistance, Rds on:0.042R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:1V; Case style:SO-8 (SOIC-8); Charge, gate n-channel:19.5nC; Current, Idm pulse:30A; Depth, external:5.26mm; Length / Height, external:1.2mm; Marking, SMD:SI4412DY; Pins, No. of:8; Power dissipation:2.5W; Power, Pd:2.5W; Resistance, Rds on @ Vgs = 10V:0.028R; Resistance, Rds on @ Vgs = 4.5V:0.042R; Resistance, Rds on max:0.028R; Temperature, Tj max:150°C; Temperature, Tj min:-55°C; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:30V; Voltage, Vgs max:20V; Voltage, Vgs th min:1V; Width, external:6.2mm