Vishay IRFSL9N60APBF
$ 1.438
Production
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | IRFSL9N60APBF-ND | 641 | 1 | Tube | ||||||||
| TME | IRFSL9N60APBF | 0 | 1 | 19h | ||||||||
| TTI | IRFSL9N60APBF | 0 | 1K | Tube | 2d | |||||||
| Newark | IRFSL9N60APBF | 0 | 1K | |||||||||
| Future Electronics | IRFSL9N60APBF | 0 | 50 | Tube |
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3-Monats-Trend: +0.00%
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-12-23
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
STMicroelectronicsSTFI10NK60Z
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in I2PAKFP package
STMicroelectronicsSTB10NK60Z-1
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in D2PAK package
onsemiFQI10N60CTU
Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
onsemiFQI12N60TU
MOSFET N-CH 600V 10.5A I2PAK / Trans MOSFET N-CH 600V 10.5A 3-Pin(3+Tab) I2PAK Rail
STMicroelectronicsSTI10N62K3
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in I2PAK package
Beschreibungen
Beschreibungen von Vishay IRFSL9N60APBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 600 V 0.75 Ohms Through Hole Power Mosfet - I2PAK (TO-262)
Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-262
170W(Tc) 30V 4V@ 250¦ÌA 49nC@ 10 V 1N 600V 750m¦¸@ 5.5A,10V 9.2A 1.4nF@25V I2PAK 10.67mm*4.83mm*9.65mm
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
NCHAN, SMD-220, 600V IRFSL9N60APBF
MOSFET, N CH, 600V, 9.2A, TO-262; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.75ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow
Aliasnamen des Herstellers
Vishay verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Vishay ist möglicherweise auch unter den folgenden Namen bekannt:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Bestandsverlauf
3-Monats-Trend: +0.00%
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Technische Spezifikationen
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.387001 g
Technical
Continuous Drain Current (ID)9.2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.4 nF
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation170 W
Rds On Max750 mΩ
Resistance750 mΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time13 ns
Dimensions
Height9.65 mm
Length10.67 mm
Width4.83 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen