STMicroelectronics STD11NM60N
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STD11NM60N | 0 | 1 | 1d | ||||||||
| Microchip USA | STD11NM60N | 351 | 600 | Tray | 2d | |||||||
| Component Stockers USA | STD11NM60N | 14.477 | >1wk | |||||||||
| Win Source | WS-STD11NM60N | 9.000 | 22 | 2h | ||||||||
| Worldway Electronics | STD11NM60N | 8.643 | 7 | Tape & Reel | 1d |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-08-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Beschreibungen
Beschreibungen von STMicroelectronics STD11NM60N, die von den Distributoren bereitgestellt werden.
N-channel 600 V, 0.37 Ohm, 10 A MDmesh(TM) II Power MOSFET in a DPAK package
Power Mosfet, N Channel, 10 A, 650 V, 450 Mohm, 10 V, 3 V
Power Field-Effect Transistor, 10A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd
Aliasnamen des Herstellers
STMicroelectronics verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. STMicroelectronics ist möglicherweise auch unter den folgenden Namen bekannt:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance850 pF
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation90 W
Rds On Max450 mΩ
Rise Time18.5 ns
Turn-Off Delay Time50 ns
Voltage Rating (DC)600 V