STMicroelectronics 2N7002

STMICROELECTRONICS 2N7002 MOSFET Transistor, N Channel, 180 mA, 60 V, 1.8 ohm, 10 V, 2.1 V

N-channel 60 V, 1.8 Ohm typ., 0.35 A STripFET(TM) II Power MOSFET in a SOT-23 package

POWER MOSFET, N-CH, VDSS 60V, RDS(ON) 1.8OHMS, ID 0.2A, SOT-23-3L, PD 0.35W, VGS+/-18V

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:0.2A; On Resistance, Rds(on):5ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-23-3L ;RoHS Compliant: Yes

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and Relaible. High saturation current capability.