Samsung Electro-Mechanics CIG22L4R7MNE

Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1.1A 0.11Ohm DCR 1008 T/R
Obsolete
HerstellerseiteDatenblatt

Preis und Lagerbestand

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DistributorSKUMinPkg
Win SourceWS-CIG22L4R7MNE6.000290
13h
Esaler ElectronicCIG22L4R7MNE72
4d
Worldway ElectronicsCIG22L4R7MNE44.6307Tape & Reel
12h
Fly-Wing TechnologyCIG22L4R7MNE1.907
11h
Run Hong ElectronicsCIG22L4R7MNE1.168
1d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Samsung Electro-Mechanics CIG22L4R7MNE herunter.

IHS

Datasheet100 SeitenVor 11 Jahren

Samsung SCT

Future Electronics

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8504.50.80.00
Introduction Date2009-05-08
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2020-11-30
LTD Date2021-06-30

Verwandte Teile

BournsCVH252009-4R7M
Ind Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1.1A 1008 T/R
Details
MurataLQM2HPN4R7MG0L
Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1.1A 0.138Ohm DCR 1008 T/R
Details
TAIYO YUDENMBMK2520T4R7M
Inductor Power Chip Wirewound 4.7uH 20% 1MHz Metal 0.8A 0.38Ohm DCR 1008 T/R
Details
TAIYO YUDENMAMK2520T4R7M
Inductor Power Chip Wirewound 4.7uH 20% 2MHz Metal 1.3A 0.26Ohm DCR 1008 T/R
Details
TAIYO YUDENNR4012T4R7M
Inductor Power Shielded Wirewound 4.7uH 20% 100KHz Ferrite 0.96A 0.168Ohm DCR 1515 T/R
Details
MurataLQM18FN4R7M00D
Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 0.08A 0.78Ohm DCR 0603 T/R
Details
TAIYO YUDENMBKK2012T4R7M
LSBHB2012KKT4R7M,Inductor Power Chip Wirewound 4.7uH 20% 1MHz Metal 0.6A 0.615Ohm DCR 0805 T/R
Details
TAIYO YUDENMBKK1608T4R7M
Inductor Power Chip Wirewound 4.7uH 20% 1MHz Metal 0.5A 0.73Ohm DCR 0603 T/R
Details
TDKMLZ2012M4R7WT000
Inductor Power Shielded Multi-Layer 4.7uH 20% 2MHz Ferrite 0.5A 0.39Ohm DCR 0805 T/R
Details
TDKMLZ2012M4R7HT000
Inductor Power Shielded Multi-Layer 4.7uH 20% 2MHz Ferrite 0.4A 0.442Ohm DCR 0805 T/R
Details

Beschreibungen

Beschreibungen von Samsung Electro-Mechanics CIG22L4R7MNE, die von den Distributoren bereitgestellt werden.

Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1.1A 0.11Ohm DCR 1008 T/R
Verical
General Purpose Inductor, 4.7uH, 20%, 1 Element, Ferrite-Core, SMD, 1008
IHS
ROHS3Compliant Multilayer Discontinued Lead Free Fixed Inductor -40C~125C 1MHz 110mOhm 4.7muH
Fly-Wing Technology
General, Ferrite Multilayer, General Type, Multilayer, 1008, RoHS
Samsung SCT
CIG Series 2520 4.7 uH ±20 % Tolerance 1.1 A SMT Shielded Power Inductor
Future Electronics
FIXED IND 4.7UH 1.1A 110MOHM SMD
SHENGYU ELECTRONICS

Aliasnamen des Herstellers

Samsung Electro-Mechanics verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Samsung Electro-Mechanics ist möglicherweise auch unter den folgenden Namen bekannt:

  • Samsung Electro-Mechanics America Inc
  • SAMSUNG ELECTRO-MECH
  • SAMSUNG EM
  • SAMSUNG PASSIVE
  • SAMSUNG ELECTRO
  • SAMSUNGEM
  • Samsung Electronics Co Ltd
  • Samsung Electro-Mechanics America
  • SAMSUNG ELECT
  • SAMSUNG ELECTRONICS
  • SAMSUNG ELECTRO-MECHANIC
  • SEMCO - SAMSUNG ELECTRO MECHAN
  • Samsung Electro-Mechanics GmbH
  • SAMSUNG ELECTRO-MECHNICS
  • SAMSUNG ELECTRONICS AMERICA
  • SAMSUNG (Samsung Electro-
  • SAMSUNG ELECTRONICS CO
  • SAMSUNG ELECTRO-ME
  • SAMSUNGEM (Other)
  • Semco - Samsung Electro M
  • Samsung Electronics Company Limited
  • ELECTRO MECHANICS
  • Samsung Electro-Mechanics Electro-Mechanics
  • MURATA/SAMSUNG ELECTRO-ME
  • SMSNG-ELEC
  • Samsung Electro-Mechanics America-Inc