Rochester Electronics IRFSL7530PBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Datenblätter und Dokumente
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Beschreibungen
Beschreibungen von Rochester Electronics IRFSL7530PBF, die von den Distributoren bereitgestellt werden.
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 60V 295A 3-Pin(3+Tab) TO-262 Tube
Mosfet, N Channel, 60V, 195A, To-262-3
Power Field-Effect Transistor, 195A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.
Aliasnamen des Herstellers
Rochester Electronics verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Rochester Electronics ist möglicherweise auch unter den folgenden Namen bekannt:
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
Technische Spezifikationen
Physical
Case/PackageTO-262
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals3
Weight2.084002 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time104 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.703 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max2 mΩ
Rise Time141 ns
Schedule B8541290080
Threshold Voltage3.7 V
Turn-Off Delay Time172 ns
Turn-On Delay Time52 ns
Dimensions
Height15.1 mm
Datenblätter und Dokumente
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